زرنيخيد الگاليوم
| الأسماء | |
|---|---|
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اسم أيوپاك المفضل
Gallium arsenide | |
| تمييز | |
| رقم CAS | [] |
| PubChem | |
| رقم EC | |
| عناوين مواضيع طبية MeSH | |
| رقم RTECS | LW8800000 |
| SMILES |
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| الخصائص | |
| الصيغة الجزيئية | GaAs |
| كتلة مولية | 144.645 g/mol |
| المظهر | Very dark red, vitreous crystals |
| الرائحة | garlic-like when moistened |
| الكثافة | 5.3176 g/cm3 |
| نقطة الانصهار |
1238 °C, 1511 K, 2260 °F |
| قابلية الذوبان في الماء | insoluble |
| قابلية الذوبان | soluble in HCL insoluble in ethanol, methanol, acetone |
| الفجوة الحزمية | 1.424 eV (at 300 K) |
| حركية الإلكترون | 8500 cm2/(V·s) (at 300 K) |
| التوصيل الحراري | 0.55 W/(cm·K) (at 300 K) |
| معامل الانكسار (nD) | 3.8 |
| البنية | |
| البنية البلورية | Zinc blende |
| الزمرة الفراغية | T2d-F-43m |
| ثابت العقد | a = 565.35 pm |
| إحداثية | Tetrahedral |
| الشكل الجزيئي | Linear |
| المخاطر | |
| ن.م.ع. مخطط تصويري | |
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ن.م.ع. عبارات المخاطر
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H301, H331, H410 |
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ن.م.ع. العبارات الاحتياطية
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P261, P273, P301+310, P311, P501 |
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تبويب الاتحاد الاوروپي (DSD)
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T N |
| توصيف المخاطر | R23/25, R50/53 |
| تحذيرات وقائية | (S1/2), نطقب:S20/21, S28, S45, S60, S61 |
| (معيـَّن النار) |
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ما لم يُذكر غير ذلك، البيانات المعطاة للمواد في حالاتهم العيارية (عند 25 °س [77 °ف]، 100 kPa). | |
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| مراجع الجدول | |
زرنيخيد الگاليوم أوأرسنيد الگاليوم أوGallium arsenide (GaAs وتُنطق: "گاليوم أرسنايد") هومركب من العنصرين گاليوم وزرنيخ. وهوشبه موصل III/V، and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells والنوافذ الضوئية.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: InGaAs and GaInNAs.
الاعداد والكيمياء
في المركب،قد يكون للگاليوم +3 حالات أكسدة. ويمكن اعداد بلورات مفردة من زرنيخيد الگاليوم بعمليتين صناعيتين:
- Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace.
- Liquid encapsulated Czochralski (LEC) growth is used for producing high-purity single crystals that can exhibit semi-insulating characteristics (see below).
Alternative methods for producing films of GaAs include:
- VPE reaction of gaseous gallium metal and arsenic trichloride:
- 2 Ga + 2 AsCl 3 → 2 GaAs + ثلاثة Cl 2
- MOCVD reaction of trimethylgallium and arsine:
- Ga(CH 3) 3 + AsH 3 → GaAs + ثلاثة CH 4
- Molecular beam epitaxy (MBE) of gallium and arsenic:
- 4 Ga + As 4 → أربعة GaAs
or
- 2 Ga + As 2 → 2 GaAs
Oxidation of GaAs occurs in air and degrades performance of the semiconductor. The surface can be passivated by depositing a cubic gallium(II) sulfide layer using a tert-butyl gallium sulfide compound such as (t BuGaS) 7.
مقارنة مع السليكون
مزايا أرسنيد الگاليوم
مزايا السليكون
استخدامات أخرى
الخلايا الشمسية والكواشف
Another important application of GaAs is for high efficiency solar cells. Gallium arsenide (GaAs) is also known as single-crystalline thin film and are high-cost high-efficiency solar cells.
In 1970, the first GaAs heterostructure solar cells were created by the team led by Zhores Alferov in the USSR. In the early 1980s, the efficiency of the best GaAs solar cells surpassed that of silicon solar cells, and in the 1990s GaAs solar cells took over from silicon as the cell type most commonly used for Photovoltaic arrays for satellite applications. Later, dual- and triple-junction solar cells based on GaAs with germanium and indium gallium phosphide layers were developed as the basis of a triple-junction solar cell, which held a record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns. This kind of solar cell powers the rovers Spirit and Opportunity, which are exploring Mars' surface. Also many solar cars utilize GaAs in solar arrays.
الأجهزة الباعثة للضوء
GaAs has been used to produce (near-infrared) laser diodes since 1962.
انظر أيضاً
- زرنيخيد الألومنيوم
- Aluminium gallium arsenide
- Arsine
- تلوريد الكادميوم
- Gallium antimonide
- Gallium arsenide phosphide
- Gallium manganese arsenide
- فوسفيد الگاليوم
- نيتريد الگاليوم
- Heterostructure emitter bipolar transistor
- زرنيخيد الإنديوم
- Indium gallium arsenide
- فوسفيد الإنديوم
- Light-emitting diode
- Metal semiconductor field effect transistor
- MOVPE
- Multijunction
- Photomixing
- Trimethylgallium
الهامش
- ^ Refractive index of GaAs. Ioffe database
- ^ Moss, S. J. and Ledwith, A. (1987). The Chemistry of the Semiconductor Industry. Springer. ISBN .CS1 maint: multiple names: authors list (link)
- ^ Smart, Lesley and Moore, Elaine A. (2005). Solid State Chemistry: An Introduction. CRC Press. ISBN .CS1 maint: multiple names: authors list (link)
- ^ "Chemical vapor deposition from single organometallic precursors" A. R. Barron, M. B. Power, A. N. MacInnes, A. F.Hepp, P. P. Jenkins U.S. Patent 5٬300٬320 (1994)
- ^ Alferov, Zh. I., V. M. Andreev, M. B. Kagan, I. I. Protasov and V. G. Trofim, 1970, ‘‘Solar-energy converters based on p-n AlxGa1-xAs-GaAs heterojunctions,’’ Fiz. Tekh. Poluprovodn. 4, 2378 (Sov. Phys. Semicond. 4, 2047 (1971))
- ^ Nanotechnology in energy applications. im.isu.edu.tw. 16 November 2005 (in Chinese) p. 24
- ^ Nobel Lecture by Zhores Alferov at nobelprize.org, p. 6
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^ Hall, Robert N. (1962). "Coherent Light Emission From GaAs Junctions". Physical Review Letters. 9 (9): 366–369. Bibcode:1962PhRvL...9..366H. doi:10.1103/PhysRevLett.9.366. Unknown parameter
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وصلات خارجية
- Case Studies in Environmental Medicine: Arsenic Toxicity
- Physical properties of gallium arsenide (Ioffe Institute)
- Facts and figures on processing gallium arsenide
